There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...
Silicon carbide (SiC) has proven to be the ideal material for high power and high voltage devices. However, it is extremely important that devices be reliable, and we are not only referring to ...
The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...
3.3 kV SiC MOSFETs and Schottky Barrier Diodes (SBDs) extend designers’ options for high-voltage power electronics in transportation, energy and industrial systems CHANDLER, Ariz., March 21, 2022 ...
Navitas Semiconductor has announced a new level of reliability for its SiC MOSFETs to meet the requirements of the most demanding automotive and industrial applications. These new ‘AEC-Plus’ 650-V and ...
Dig into the details of just how reliable are some GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies are for S-Band and X-Band. August 14th, 2019 - By: Wolfspeed, a ...
CHANDLER, Ariz., March 16, 2020 (GLOBE NEWSWIRE) -- Demand continues to rapidly grow for Silicon Carbide (SiC)-based systems to maximize efficiency and reduce size and weight, allowing engineers to ...
STAr Technologies, a leader in parametric and reliability test systems today has launched STAr Pluto series tester to meet test needs for both Package- and Wafer-level reliability test systems. This ...
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