Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...
AOS’ AOTL037V60DE2 600V MOSFET is designed to meet the growing demand for high efficiency and high-power density across a ...
The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, targeting automotive, energy, industrial, and telecom systems. The ...
ROHM Co., Ltd. has developed the 100V power MOSFET--RS7P200BM--achieving industry-leading safe operating area (SOA) performance in a 5060-size (5.0mm x 6.0mm) package. This product is ideal for ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
IXYS announced the expansion of its high voltage power MOSFET product line, the 2000 V n-channel power MOSFET featuring 1 A current rating specifically designed for high voltage, high speed power ...
Toshiba Launches 100V N-Channel Power MOSFET with Its Latest Generation Process Technology[1] to Improve Efficiency in Switched-Mode Power Supplies for Industrial Equipment Toshiba Electronic Devices ...
SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of power semiconductors, power ICs, and ...
Sparked by the current- and power-density requirements of brick-type dc/dc converters and by evolving Intel voltage regulator module (VRM) specs, a new round of power MOSFET development is under way ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...
IXYS' family of 500-V to 1200-V linear power MOSFETs incorporate a cell design that significantly improves ruggedness and power dissipation capabilities. IXYS’ family of 500-V to 1200-V linear power ...
With the majority of dc-dc converters now using surface mount technology, there's a need for low-profile, surface-mountable power MOSFETs with the necessary dissipation and thermal properties. The ...
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