SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
The AOLV66935 designed by Alpha and Omega Semiconductor is a 100V N-channel High Safe Operating Area (SOA) MOSFET ...
This article explains the switching behavior of power MOSFETs in practical application circuits and shows the reader/designer how to choose the right device for the application using the ...
Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...
The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...
Self protected against excessive temperature, current, and voltage, as well as ESD, the BSP75G 60V, 550-m? n-channel MOSFET will also protect the load via internal current limiting. The device ...
In a critical advance that will help designers meet the stringent power-density and packaging requirements of new sub-brick power architectures, Siliconix Inc. announced the industry's first 200-V ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPD7107F,” a gate driver switch IPD [1] that controls the conduction and shut-off of current supplied ...
Alpha and Omega Semiconductor unveiled its MOS E2 600V Super Junction MOSFET platform. The first high-voltage product from the new platform ...
The Forward and Flyback converters are two popular topologies widely used in isolated DC-DC power converters. These topologies are favored by designers for their simplicity, ability to handle multiple ...
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